electron drift
英 [ɪˈlektrɒn drɪft]
美 [ɪˈlektrɑːn drɪft]
网络 电子漂移
双语例句
- An important feature of the velocity-field characteristics is a differential negative resistance effect in steady state electron drift velocity.
在平均漂移速度-电场特性中发现了微分负阻效应。 - Steady transmission characteristics of intense electron beams in one-dimensional drift spaces
一维漂移空间内强流电子束的稳态传输特性 - GaN materials have the characteristics of wide band gap, high electron saturation drift velocity, low dielectric constant and good thermal conductivity. They have wide potential application and development in fields of microelectronics and optoelectronics.
GaN材料因为其禁带宽度大、电子漂移饱和速度高、介电常数小、导热性能好等特点，在微电子和光电子领域具有十分广阔的应用优势和发展前景。 - Nonlinear Evolution of the Magnetic Electron Drift Waves
磁电子漂移波的非线性演化 - Experiments and Computations on Electron Beam Drift Caused by the Deformation of the Cathode Filament
阴极形变引起的电子束漂移的实验和计算 - Silicon carbides ( SiC) are a kind of wide bandgap compound semiconductor material which have greater saturated electron drift velocity, higher critical breakdown electric field and higher thermal conductivity.
碳化硅（SiC）是一种具有较大的电子饱和漂移速度、高临界击穿电场和高热导率的宽禁带化合物半导体材料。 - The growing ion acoustic wave instability caused by the slow electron drift is studied by both CW and pulse modulated wave methods.
用连续波和调制脉冲波两种方法研究了由慢电子漂移引起的增长离子声波不稳定性。 - Silicon carbide ( SiC) has outstanding properties such as high thermal conductivity, high saturated electron drift velocity and high electric breakdown field, and is a very promising material to fabricate high-temperature, high-power and high-frequency semiconductor devices.
碳化硅（SiC）材料具有热导率高、电子的饱和速度大、击穿电压高等优点，是制备高温、大功率、高频等半导体器件的理想材料。 - Physical analysis of electron injection by electrical drift in Tokamak
托卡马克电场漂移电子注入的物理分析研究 - E. the ionization coefficient f of electron collision with neutral moleculars is contributed from both of electron drift velocity and diffusion velocity while it was assumed to be a constant in the previous model.
考虑到电子能量分布，认为电子碰撞电离速率系数f取决于电子的迁移速度VE和扩散速度VD，而不象以前假设电离速率系数f为一常数。 - The effects of turbulence on the ion sounds, electron langmuir waves and drift waves have also been discussed.
讨论了湍流场对离声波、电子朗缪波和低频漂移波的影响。 - A drift chamber with uniform electric field and measurements of the electron drift velocity
一个均匀电场漂移室和电子漂移速度的测量 - Electron diamagnetic drift ballooning modes in a tandem mirror
串级磁镜电子抗磁性漂移气球模 - AlGaN/ GaN HEMT has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields.
AlGaN/GaNHEMT由于具有击穿电压高、电子漂移速度快和电子浓度大等特点，已被越来越多地应用于高频及大功率领域。 - As an important semiconductor material, AlN has a bright future in the microelectronic and optoelectronic fields with its unique combination of properties such as wide bandgap, high breakdown field, high thermal conductivity and high saturated electron drift velocity.
AlN是一种重要的半导体材料，由于具有宽带隙、高临界击穿电场、高热导率、高载流子饱和漂移速度等优越的特性，在微电子和光电子领域具有广泛的应用前景。 - Theoretical research together with the simulation method show in this situation, space charge modes exist in waveguide without electron drift.
数值计算和理论分析表明，在没有电子漂移的情况下，磁化等离子体波导中存在空间电荷波模式。 - On the one hand, the deformation of local electric fields induced by water drops causes more violent collision ionization in the area with enhanced electric fields, and makes electron drift/ diffusion velocities be faster, so it is possible that discharges begin at the enhanced areas.
一方面，水滴对电场的强烈畸变，使得局部电场加强的区域碰撞电离加剧，并且电子的迁移/扩散速率也随着电场的增强而加快，在局部电场加强的区域可能首先发生放电； - Study on the Electric Field with Electron Injection by Electric Drift on Tokamak
有漂移电子注入时托卡马克中电场分布计算 - The electrostatic corrections to the electron magnetic-drift waves
电子磁漂移波的静电修正问题 - Silicon carbide ( SiC) is one of the most popular semiconductor materials with great potential in many microelectronics applications due to its excellent properties such as wide band gap, high breakdown electric field, high electron saturated drift velocity and high thermal conductivity.
SiC作为目前最热门的半导体材料之一，因其具有宽禁带、高击穿电场、高载流子饱和漂移速率和高热导率等许多优点，在微电子领域有着广泛的应用前景。 - SiC materials with a high electric breakdown field, a high saturated electron drift velocity and a high thermal conductivity, have a great potential in power devices.
SiC材料具有高电流击穿场、高饱和电子漂移速率、高热导率等特性，使得SiC材料在功率器件领域具有巨大的潜力。 - Silicon carbide is useful in many fields because it has many advantages such as wide band gap, high broken electric field, fast electron drift velocity, fast thermal conductivity, good thermal stability, good mechanical strength, antioxidant, corrosion-resistant and so on.
碳化硅由于其禁带宽度大、击穿电场高、电子漂移速度大、热导率大、热稳定性、机械强度大、抗氧化、耐腐蚀等优点在众多领域有着广泛的应用。 - The results show that the electron mean drift velocity is affected by the cathode radius, the impedance of the load diode, the inner radius of vanes and the input voltage.
结果表明电子平均漂移速度决定于阴极杆半径、负载二极管阻抗、阳极慢波叶片内径和输入电压。 - As a third-generation semiconductor, GaN having excellent characteristics such as wide band gap, high electron saturation drift velocity, small dielectric constant and high breakdown field, is very suitable for making high-frequency, high-speed, high power, anti-radiation, high integration electronic devices and circuits.
第三代半导体材料GaN具有禁带宽度大、电子饱和漂移速率高、介电常数小和击穿场强高等特点，非常适用于制作高频、高速、高功率、抗辐射、高集成度的电子器件和电路。 - Silicon carbide ( SiC) has found wide application in the fields of high-frequency, high-temperature, high-power and radio-resistant due to its excellent properties such wide gap, high electron saturation drift velocity, high critical electric field and high thermal conductivity.
碳化硅（SiC）材料具有宽禁带、高电子饱和漂移速率、高临界击穿场强、高热导率等优良特性，在高频、高温、大功率、抗辐射等领域拥有极为广阔的应用前景。 - Due to the wide band gap, high thermal conductivity and large electron saturation drift rate in electrical properties, Silicon carbide is showing great potential and broad market prospects.
碳化硅具有带隙宽、热导率高、电子饱和漂移速率大等优异的电学性能，正展现出巨大的发展潜力和广阔的市场前景，因此近年来对碳化硅的研究非常热门。 - By comparison with the experimental data, each electron drift velocity is quite different depending on the measurement methods. So we have the conclusion that proper measurement is essential for simulation.
通过与实验数据对比发现，各个电子漂移速度根据测量方法的不同有较大差异，选择正确的测量方法至关重要。 - Gallium nitride material has superior physical properties, such as wide bandgap, high saturation electron drift velocity and high thermal conductivity. It has great potential for application in high temperature, high power and microwaves fields.
GaN半导体材料具有禁带宽度大、电子饱和速度高、导热性能好等优点，在高温、大功率、微波器件领域拥有很大发展潜力。 - Silicon carbide is an attractive wide band semiconductor material in high-temperature, high-frequency, high-power and radiation resistant applications due to its excellent physical properties such as high breakdown voltage, high thermal conductivity and high saturation electron drift velocity.
碳化硅（SiC）由于其有热导率高、电子的饱和速度大、击穿电压高等优点而成为制作高温、高频、大功率和抗辐射器件的极具潜力的宽带隙半导体材料。 - Silicon Carbide ( SiC) has wide applications in high temperature, high frequency and high radiation environment because of its superior properties, primarily its wide band gap, high critical breakdown field, excellent thermal conductivity and high electron saturation drift velocity.
碳化硅（SiC）禁带宽、临界击穿电场大、热导率高、电子饱和漂移速度快，在高温、高频、高辐射环境下有广阔的应用前景。